Communications in Physics 26
, 159-164 (2016)
METAL-INSULATOR PHASE DIAGRAM FOR THE FULLY DIAGONAL DISORDERED HUBBARD MODEL AT HALF-FILLING
HOANG ANH TUAN AND NGUYEN THI HAI YEN
The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory.