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Physica B 479, 62–66 (2015)

ISSN: 0921-4526, SCI

Electron distribution in polar heterojunctions within a realistic model

Nguyen Thanh Tien, Dinh Nhu Thao, Pham Thi Bich Thao, Doan Nhat Quang

We present a theoretical study of the electron distribution,i.e.,two-dimensional electrongas(2DEG)in polar heterojunctions(HJs)within a realistic model.The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein,interface polarization charges take a double role:they induce a confining potential and, furthermore, they can make some change in other confinements, e.g.,in the Hartree potential from io- nized impurities and 2DEG.Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density.The 2DEG bulk density is found to be increased in the barrier,so that the scattering occurring in this layer(from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.

URL: http://dx.doi.org/10.1016/j.physb.2015.09.042