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Seminar on Theoretical and Computational Physics:
Title"Empirical tight-binding method for modeling SiGe nanocrystals in the matrix of SiO2 and calculations of electronic and optical properties of Si/Ge and PbSe quantum dots"
SpeakerAlex Belolipetskiy and Ivan Avdeev
AffiliationViện Ioffe, St. Petersburg, Liên bang Nga
DateTuesday, 09-04-2019
Time10:00 AM
LocationMeeting room, 6th floor, 2H Building, 18 Hoang Quoc Viet, Hanoi
AbstractThe first part of the talk will be a presentation of our recent development of tight binding model for modeling Si/Ge nanocrystal embedded in SiO2 matrix. In the second part, we will talk about analysis of electron and hole states in real/reciprocal space and details of optical properties calculations. We will also discuss our recent activity regarding fine structure of excitonic states in PbSe quantum dots.
Host personNguyễn Huy Việt