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Tạp chí thuộc danh mục SCIE

  1. Geometry of Einstein-Podolsky-Rosen Correlations
    H. Chau Nguyen, Huy-Viet Nguyen, and Otfried Gühne
    Physical Review Letters 122, 240401 (2019)
  2. Structural and electronic properties of defect-free and defect-containing polypropylene: a computational study by van der Waals density-functional method
    Huy-Viet Nguyen and Thinh H. Pham
    Physica Status Solidi b 255, 1700036 (2018)
  3. Advanced capabilities for materials modelling with Quantum ESPRESSO
    P Giannozzi, O Andreussi, T Brumme, O Bunau, M Buongiorno Nardelli, ... H-V Nguyen, ... T Thonhauser, P Umari, N Vast, X Wu and S Baroni
    Journal of Physics: Condensed Matter 29, 465901 (2017)
  4. Comment on “Orientation dependence of the optical spectra in graphene at high frequencies”
    Huy-Viet Nguyen and V. Hung Nguyen
    Phys. Rev. B 94, 117401 (2016)
  5. Density-functional description of polymer crystals: A comparative study of recent van der Waals functionals
    Thinh H. Pham, Rampi Ramprasad and Huy-Viet Nguyen
    J. Chem. Phys 144, 214905 (2016)
  6. Strong negative differential conductance in strained graphene devices
    M. Chung Nguyen, V. Hung Nguyen, Huy-Viet Nguyen and P. Dollfus
    JOURNAL OF APPLIED PHYSICS 118, 234306 (2015)
  7. Enhanced Seebeck effect in graphene devices by strain and doping engineering
    M. Chung Nguyen, V. Hung Nguyen, Huy-Viet Nguyen, J. Saint-Martin, and P. Dollfus
    Physica E 73, 207 (2015)
  8. Strain-induced conduction gap in vertical devices made of misoriented graphene layers
    V. Hung Nguyen, Huy-Viet Nguyen, J. Saint-Martin, and P. Dollfus
    Nanotechnology 26, 115201 (2015)
  9. Enhanced thermoelectric figure of merit in vertical graphene junctions
    V. Hung Nguyen, M. Chung Nguyen, Huy-Viet Nguyen, J. Saint-Martin and P. Dollfus
    Appl. Phys. Lett. 105, 133105 (2014)
  10. Conduction gap in graphene strain junctions: direction dependence
    Mai-Chung Nguyen, Viet-Hung Nguyen, Huy-Viet Nguyen, and Dollfus, Philippe
    Semiconductor Science and Technology 29, 115024 (2014)
  11. Improved performance of graphene transistors by strain engineering
    V. Hung Nguyen, Huy-Viet Nguyen, and P. Dollfus
    Nanotechnology 25, 165201 (2014)
  12. Band offsets and dielectric properties of the amorphous Si3N4/Si(100) interface: A first-principles study
    T. Anh Pham, Tianshu Li, Huy-Viet Nguyen, Sadasivan Shankar, Francois Gygi, and Giulia Galli
    APPLIED PHYSICS LETTERS 102, 241603 (2013)
  13. GW calculations using the spectral decomposition of the dielectric matrix: Verification, validation, and comparison of methods
    T. Anh Pham, Huy-Viet Nguyen, Dario Rocca, and Giulia Galli
    Phys. Rev. B 87, 155148 (2013)
  14. Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures
    V. Hung Nguyen, M. Chung Nguyen, Huy-Viet Nguyen, and P. Dollfus
    JOURNAL OF APPLIED PHYSICS 113, 013702 (2013)
  15. Improving accuracy and efficiency of calculations of photoemission spectra within the many-body perturbation theory
    Huy-Viet Nguyen, T. Anh Pham, Dario Rocca, and Giulia Galli
    Phys. Rev. B: Rapid Communications 85, 081101 (2012)
  16. Power series expansion of the RPA correlation energy: The role of the third- and higher-order contributions
    Deyu Lu, Huy-Viet Nguyen, and Giulia Galli
    J. Chem. Phys. 133, 154110 (2010)
  17. A first-principles study of weakly bound molecules using exact exchange and the Random Phase Approximation
    Huy-Viet Nguyen and Giulia Galli
    J. Chem. Phys. 132, 044109 (2010)
  18. Van der Waals Interactions in Molecular Assemblies from First-Principles Calculations
    Yan Li, Deyu Lu, Huy-Viet Nguyen, and Giulia Galli
    J. Phys. Chem. A 114, 1944 (2010)
  19. Efficient calculation of exact exchange and RPA correlation energies in the adiabatic-connection fluctuation-dissipation theory
    Huy-Viet Nguyen and Stefano de Gironcoli
    Phys. Rev. B 79, 205114 (2009)
  20. Van der Waals coefficients of atoms and molecules from a simple approximation for the polarizability
    Huy-Viet Nguyen and Stefano de Gironcoli
    Phys. Rev. B 79, 115105 (2009)
  21. Magnetic properties of exchange-biased three-layer films in a perpendicular magnetic field
    V. T. Ngo, H. V. Nguyen, H. T. Diep, and V. L. Nguyen
    Phys. Rev. B 69, 134429 (2004)
  22. Field effects on the magnetic properties of three-layer films
    H. V. Nguyen, V. T. Ngo, T. H. Diep and V. L. Nguyen
    Physica B 327, 427 (2003)

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